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Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process
and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the
LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence
(PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined
LuAG:Tb films showed the Tb3+ characteristic emission bands.
Jian Wang,Siqing Shen,Jianjun Xie,Ying Shi, andFei Ai
"Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Y (18 February 2011); https://doi.org/10.1117/12.888433
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Jian Wang, Siqing Shen, Jianjun Xie, Ying Shi, Fei Ai, "Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method," Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Y (18 February 2011); https://doi.org/10.1117/12.888433