MBE growth and electrical properties of InSb film on GaAs substrate

Y. H. Zhang; P. P. Chen; T. Lin; H. Xia; T. X. Li

doi:10.1117/12.888173

18 February 2011 MBE growth and electrical properties of InSb film on GaAs substrate

Y. H. Zhang, P. P. Chen, T. Lin, H. Xia, T. X. Li

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79952G (2011) https://doi.org/10.1117/12.888173
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.

Citation Download Citation

Y. H. Zhang, P. P. Chen, T. Lin, H. Xia, and T. X. Li "MBE growth and electrical properties of InSb film on GaAs substrate", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952G (18 February 2011); https://doi.org/10.1117/12.888173

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