Analysis of internal crack propagation in silicon due to permeable pulse laser irradiation: study on processing mechanism of stealth dicing

Etsuji Ohmura; Yuta Kawahito; Kenshi Fukumitsu; Junji Okuma; Hideki Morita

doi:10.1117/12.887431

28 February 2011 Analysis of internal crack propagation in silicon due to permeable pulse laser irradiation: study on processing mechanism of stealth dicing

Etsuji Ohmura, Yuta Kawahito, Kenshi Fukumitsu, Junji Okuma, Hideki Morita

Author Affiliations +

Proceedings Volume 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010; 799603 (2011) https://doi.org/10.1117/12.887431
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2010, 2010, St. Petersburg, Russian Federation

Abstract

Stealth dicing (SD) is an innovative dicing method developed by Hamamatsu Photonics K.K. In the SD method, a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave propagates every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside the wafer after the thermal shock wave propagation. In our previous study, it was concluded that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse overlaps with this layer partially. In the experimental result, the trace that a crack is progressed gradually step by step was observed. In this study, the possibility of internal crack propagation by laser pulses was investigated. A two-dimensional thermal stress analysis based on the linear fracture mechanics was conducted using the stress distribution obtained by the axisymmetric thermal stress analysis. As a result, the validity of the hypothesis based on a heat transfer analysis result previously presented was supported. Also it was concluded that the internal crack is propagated by at least two pulses.

Citation Download Citation

Etsuji Ohmura, Yuta Kawahito, Kenshi Fukumitsu, Junji Okuma, and Hideki Morita "Analysis of internal crack propagation in silicon due to permeable pulse laser irradiation: study on processing mechanism of stealth dicing", Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 799603 (28 February 2011); https://doi.org/10.1117/12.887431

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