Paper
28 February 2011 Effect of laser irradiation on the structures properties such as SiO2/Si
V. P. Veiko, A. M. Skvortsov, V. I. Sokolov, Quang Tung Pham, R. A. Khalecki, E. I. Efimov
Author Affiliations +
Proceedings Volume 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010; 79960S (2011) https://doi.org/10.1117/12.889523
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2010, 2010, St. Petersburg, Russian Federation
Abstract
In this paper the results of research of influence of laser emission on electrophysical and structural parameters of SiO2/Si system are given. Research samples were irradiated with optical fiber YLP-laser (λ=1,06 μm) with 250ns pulse length. Power of emission in impulse was (2-4) - 7,13 Wt/sm2 . As experimental sample thermal oxidated silicon base KEF-4,5 was used, which crystallographic plane was similar to (100). As a result of experiments it is shown that laser irradiation of Si/SiO2 system can form SiO2+silicon nanoclusters system on silicon film. Nano-engineering of SiO2/Si system is accompanied by essential changing of electrophysical properties of initial MOS structures.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Veiko, A. M. Skvortsov, V. I. Sokolov, Quang Tung Pham, R. A. Khalecki, and E. I. Efimov "Effect of laser irradiation on the structures properties such as SiO2/Si", Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 79960S (28 February 2011); https://doi.org/10.1117/12.889523
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Cited by 4 scholarly publications.
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KEYWORDS
Silicon

Silica

Laser irradiation

Oxides

Nanocomposites

Molybdenum

Visible radiation

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