Modeling of the electrical carrier transport in III-V on silicon tandem solar cell structures

T. K. Maiti; Dan Cheong; Jingfeng Yang; R. N Kleiman

doi:10.1117/12.905027

8 September 2011 Modeling of the electrical carrier transport in III-V on silicon tandem solar cell structures

T. K. Maiti, Dan Cheong, Jingfeng Yang, R. N Kleiman

Proceedings Volume 8007, Photonics North 2011; 80071W (2011) https://doi.org/10.1117/12.905027
Event: Photonics North 2011, 2011, Ottawa, Canada

Abstract

The electrical carrier transport of a tandem cell structure was evaluated by investigating the band alignment of and carrier transport through a tunnel junction. The modeling structure of a tandem cell consists of a III-V (or II-VI) top cell layer, a Si bottom cell layer and tunnel junction layers in-between which connect the top and the bottom cells. The values of energy bandgap and electron affinity of each layer were varied to investigate their effect on the energy barrier height at the interface between Si and compound semiconductors of interest. The contour plots of barrier heights for majority and minority carriers at the hetero-interface are used as a starting point to define the successful regions for electrical carrier transport through the tunnel junctions.

Citation Download Citation

T. K. Maiti, Dan Cheong, Jingfeng Yang, and R. N Kleiman "Modeling of the electrical carrier transport in III-V on silicon tandem solar cell structures", Proc. SPIE 8007, Photonics North 2011, 80071W (8 September 2011); https://doi.org/10.1117/12.905027

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