Metal contacts to p-type crystalline CuInSe2

Sunyoung Park; Clifford H. Champness; Zetian Mi; Ishiang Shih

doi:10.1117/12.905162

8 September 2011 Metal contacts to p-type crystalline CuInSe₂

Sunyoung Park, Clifford H. Champness, Zetian Mi, Ishiang Shih

Proceedings Volume 8007, Photonics North 2011; 80071X (2011) https://doi.org/10.1117/12.905162
Event: Photonics North 2011, 2011, Ottawa, Canada

Abstract

Bilayers of metal contacts were deposited on p-type monocrystalline copper indium diselenide (CuInSe₂) and the resistance between two contacts were measured to find low resistance metal contacts on crystalline CuInSe₂. The first metal layer was Ni, Pt, Se, or Te and the second metal layer was Au, Ag, Al or Cu. It was observed that the resistance reduced when the surface of crystalline CuInSe₂ were etched before metal deposition with a solution containing H₂SO₄(1 %, w/w) and CrO₃ (1 %, w/w). It was confirmed that the resistance increases after heat-treatments at high temperature. The stability of the metal contacts in room air was estimated from the resistance measured for a period of over 20 days.

Citation Download Citation

Sunyoung Park, Clifford H. Champness, Zetian Mi, and Ishiang Shih "Metal contacts to p-type crystalline CuInSe₂", Proc. SPIE 8007, Photonics North 2011, 80071X (8 September 2011); https://doi.org/10.1117/12.905162

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