Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors

Sevag Terterian; Hasan Sharifi; Pierre-Yves Delaunay; Brett Nosho; Mark Roebuck; Rajesh Rajavel

doi:10.1117/12.886503

20 May 2011 Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors

Sevag Terterian, Hasan Sharifi, Pierre-Yves Delaunay, Brett Nosho, Mark Roebuck, Rajesh Rajavel

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 801212 (2011) https://doi.org/10.1117/12.886503
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Recent efforts in developing InAs/GaSb strained-layer superlattices for LWIR detectors are described. The structural properties of the devices grown by MBE at HRL were evaluated using optical microscopy, x-ray diffraction, and atomic force microscopy. Epilayer roughness and surface morphology are briefly described. Small format focal plane arrays were fabricated to serve as a baseline for device study, and to determine the effects of underfill epoxy on detector performance. A novel approach for epilayer transfer on silicon is also presented.

Citation Download Citation

Sevag Terterian, Hasan Sharifi, Pierre-Yves Delaunay, Brett Nosho, Mark Roebuck, and Rajesh Rajavel "Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801212 (20 May 2011); https://doi.org/10.1117/12.886503

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