Performances analysis of symmetrical and asymmetrical InAs/GaSb superlattice pin photodiode

C. Cervera; R. Taalat; P. Christol; J. B. Rodriguez; K. Jaworowicz; I. Ribet-Mohamed; L. Konczewicz; S. Contreras

doi:10.1117/12.882133

20 May 2011 Performances analysis of symmetrical and asymmetrical InAs/GaSb superlattice pin photodiode

C. Cervera, R. Taalat, P. Christol, J. B. Rodriguez, K. Jaworowicz, I. Ribet-Mohamed, L. Konczewicz, S. Contreras

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 801213 (2011) https://doi.org/10.1117/12.882133
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature. The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off wavelength (λc) of 4.5μm, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for λc = 5.5μm at 80K. Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K]. Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance in the MWIR domain.

Citation Download Citation

C. Cervera, R. Taalat, P. Christol, J. B. Rodriguez, K. Jaworowicz, I. Ribet-Mohamed, L. Konczewicz, and S. Contreras "Performances analysis of symmetrical and asymmetrical InAs/GaSb superlattice pin photodiode", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801213 (20 May 2011); https://doi.org/10.1117/12.882133

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