At the 2010 meeting of the Defense and Security Symposia Raytheon
reported on the status of their efforts to establish a high rate uncooled
detector manufacturing capability. At that time we had just finished the transition of the 640 × 480, 25 μm product to our 200 mm wafer fab line at Freescale semiconductor and established an automated packaging and test capability.
Over the past year we have continued to build on that foundation. In this paper we will report on this year's progress in completing the transition of our 25 μm product line to Freescale semiconductor. Included will be
the 320 × 240 product transition and a summary of SPC and defectivity
data from one year's production.
Looking beyond 25 μm, we are well along in our transition of the 17 μm
product line to Freescale, with test results being available for the
640 × 480. Additionally, we will report on progress / status of the
Tailwind program, which is developing a 2048 × 1536, 17 μm uncooled
sensor. Data to be reported includes the establishment of subfield
stitching at a high rate commercial fab and the development of the
detector package and electronics.
With 17 μm transitioned to production, Raytheon has started work on the
HD LWIR program, which is laying the foundation for the next
generation of uncooled detectors by further shrinking the pixel to <17
μm. With the HD LWIR program just beginning, we will review our
development strategy and program plan.