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20 May 2011 Uncooled detector development at Raytheon
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At the 2010 meeting of the Defense and Security Symposia Raytheon reported on the status of their efforts to establish a high rate uncooled detector manufacturing capability. At that time we had just finished the transition of the 640 × 480, 25 μm product to our 200 mm wafer fab line at Freescale semiconductor and established an automated packaging and test capability. Over the past year we have continued to build on that foundation. In this paper we will report on this year's progress in completing the transition of our 25 μm product line to Freescale semiconductor. Included will be the 320 × 240 product transition and a summary of SPC and defectivity data from one year's production. Looking beyond 25 μm, we are well along in our transition of the 17 μm product line to Freescale, with test results being available for the 640 × 480. Additionally, we will report on progress / status of the Tailwind program, which is developing a 2048 × 1536, 17 μm uncooled sensor. Data to be reported includes the establishment of subfield stitching at a high rate commercial fab and the development of the detector package and electronics. With 17 μm transitioned to production, Raytheon has started work on the HD LWIR program, which is laying the foundation for the next generation of uncooled detectors by further shrinking the pixel to <17 μm. With the HD LWIR program just beginning, we will review our development strategy and program plan.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. H. Black, T. Sessler, E. Gordon, R. Kraft, T. Kocian, M. Lamb, R. Williams, and T. Yang "Uncooled detector development at Raytheon", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80121A (20 May 2011);


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