Paper
20 May 2011 Scale down of p-n junction diodes of an uncooled IR-FPA for improvement of the sensitivity and thermal time response by 0.13-µm CMOS technology
Ikuo Fujiwara, Keita Sasaki, Kazuhiro Suzuki, Hitoshi Yagi, Honam Kwon, Hiroto Honda, Koichi Ishii, Masako Ogata, Masaki Atsuta, Risako Ueno, Mitsuyoshi Kobayashi, Hideyuki Funaki
Author Affiliations +
Abstract
We have developed an uncooled infrared radiation focal plane array (IR-FPA) with 22 μm pitch and 320 × 240 pixels utilizing silicon p-n junction diodes, which were fabricated by 0.13 μm CMOS technology and bulk-micromachining. The thermal time response of cells was lowered to be 16msec by reduction of thermal capacity of cells. In addition to increase the sensitivity of cells by extending the length of supporting beams, p-n junction diode was scaled down as small as 20% in area compared to previous one. Micro-holes were formed in the cell to reduce only thermal capacity, which were negligibly small compared to incident IR wavelength. This method needs no additional process step and is considered as suitable for low cost and mass-productive IR-FPA.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ikuo Fujiwara, Keita Sasaki, Kazuhiro Suzuki, Hitoshi Yagi, Honam Kwon, Hiroto Honda, Koichi Ishii, Masako Ogata, Masaki Atsuta, Risako Ueno, Mitsuyoshi Kobayashi, and Hideyuki Funaki "Scale down of p-n junction diodes of an uncooled IR-FPA for improvement of the sensitivity and thermal time response by 0.13-µm CMOS technology", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80121G (20 May 2011); https://doi.org/10.1117/12.883342
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Cited by 2 scholarly publications.
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KEYWORDS
Diodes

CMOS technology

Thermography

Infrared detection

Absorption

Silicon

Infrared technology

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