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20 May 2011 VPD PbSe technology fills the existing gap in uncooled low-cost and fast IR imagers
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In 2007 the compatibility of VPD PbSe and Silicon CMOS technologies was demonstrated. At that time, the first monolithic device, a laboratory demonstrator with 16x16 elements, was processed successfully. Since then the technology has evolved towards its industrial maturity and a number of new devices based on this material have been developed. Their performances have converted the VPD PbSe in one of the most promising technologies in the market for fast and low cost IR imagers. In this paper a brief historical review and the state of the art of the PbSe technology are presented, as well as the ultimate performances commercially available,the latest experimental results obtained for three relevant applications, and the future technology evolution to fulfill the requirements associated with more complexes and demanding applications.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Vergara, R. Linares-Herrero, R. Gutiérrez-Álvarez, M. T. Montojo, C. Fernández-Montojo, A. Baldasano-Ramírez, and G. Fernández-Berzosa "VPD PbSe technology fills the existing gap in uncooled low-cost and fast IR imagers", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80121Q (20 May 2011);

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