MOVPE grown InGaAs/GaAsSb type II quantum well photodiode for SWIR focal plane array

H. Inada; H. Mori; Y. Nagai; Y. Iguchi; T. Saitoh; K. Fujii; T. Ishizuka; K. Akita

doi:10.1117/12.888096

10 June 2011 MOVPE grown InGaAs/GaAsSb type II quantum well photodiode for SWIR focal plane array

H. Inada, H. Mori, Y. Nagai, Y. Iguchi, T. Saitoh, K. Fujii, T. Ishizuka, K. Akita

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 801220 (2011) https://doi.org/10.1117/12.888096
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Infrared sensors with type II quantum well structure have gained great attention and have shown advanced progress. InGaAs/GaAsSb type II quantum well structures are considered as an attractive material system for realizing low dark current PDs owing to lattice-matching to InP substrate. In this report, we describe successful operation of PIN-PDs with InGaAs/GaAsSb quantum wells grown by metal-organic vapor phase epitaxy (MOVPE). MOVPE method is well-known to have good uniformity which leads to mass-production of focal plane array. Planer type pin-PDs were adopted. The p-n junction was formed in the absorption layer by the selective diffusion of zinc. Electrical and optical characteristics of pin-PDs such as well number dependence of responsivity, were investigated. Dark current was 9.0 μA/cm² at 233 K, which has better uniformity compared to those of MBE sample, and responsivity of 0.8 A/W in SWIR region were obtained. This result indicates that planer photodiode using MOVPE grown InGaAs/GaAsSb type II quantum wells is a promising candidate for consumer applications.

Citation Download Citation

H. Inada, H. Mori, Y. Nagai, Y. Iguchi, T. Saitoh, K. Fujii, T. Ishizuka, and K. Akita "MOVPE grown InGaAs/GaAsSb type II quantum well photodiode for SWIR focal plane array", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801220 (10 June 2011); https://doi.org/10.1117/12.888096

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