IR CMOS: ultrafast laser-enhanced silicon detection

M. U. Pralle; J. E. Carey; H. Homayoon; J. Sickler; X. Li; J. Jiang; D. Miller; C. Palsule; J. McKee

doi:10.1117/12.882867

20 May 2011 IR CMOS: ultrafast laser-enhanced silicon detection

M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, J. McKee

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 801222 (2011) https://doi.org/10.1117/12.882867
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.

Citation Download Citation

M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, and J. McKee "IR CMOS: ultrafast laser-enhanced silicon detection", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801222 (20 May 2011); https://doi.org/10.1117/12.882867

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