High-operating temperature (HOT) broadband quantum-dot infrared photodetector

Puminun Vasinajindakaw; Xuejun Lu; Xifeng Qian; Shivashankar R. Vangala; William Goodhue

doi:10.1117/12.887362

20 May 2011 High-operating temperature (HOT) broadband quantum-dot infrared photodetector

Puminun Vasinajindakaw, Xuejun Lu, Xifeng Qian, Shivashankar R. Vangala, William Goodhue

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80122X (2011) https://doi.org/10.1117/12.887362
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

In this paper, a high operating temperature (HOT) broadband InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 μm to 10 μm. A large photoresponsivity of 12.0 A/W at a low bias voltage of 0.15V and a high peak specific photodetectivity D* of 1.2×10⁸ cmHz^1/2/W are obtained at a high operating temperature of 298 K.

Citation Download Citation

Puminun Vasinajindakaw, Xuejun Lu, Xifeng Qian, Shivashankar R. Vangala, and William Goodhue "High-operating temperature (HOT) broadband quantum-dot infrared photodetector", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80122X (20 May 2011); https://doi.org/10.1117/12.887362

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