Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu; J. A. Peters; C. Zang; Nam Ki Cho; Bruce W. Wessels; Simon Johnsen; Sebastian Peter; John Androulakis; Mercouri G. Kanatzidis; Jung-Hwan Song; Hosub Jin; Arthur J. Freeman

doi:10.1117/12.883230

3 June 2011 Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu, J. A. Peters, C. Zang, Nam Ki Cho, Bruce W. Wessels, Simon Johnsen, Sebastian Peter, John Androulakis, Mercouri G. Kanatzidis, Jung-Hwan Song, Hosub Jin, Arthur J. Freeman

Author Affiliations +

Proceedings Volume 8018, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII; 80180H (2011) https://doi.org/10.1117/12.883230
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe₂, Tl₆I₄Se, and Tl₂Au₄S₃ for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl₆I₄Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under ⁵⁷Co radiation, Tl₆I₄Se has a well-resolved spectral response and peak FWHM comparable to those of Cd_0.9Zn_0.1Te.

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Zhifu Liu, J. A. Peters, C. Zang, Nam Ki Cho, Bruce W. Wessels, Simon Johnsen, Sebastian Peter, John Androulakis, Mercouri G. Kanatzidis, Jung-Hwan Song, Hosub Jin, and Arthur J. Freeman "Tl-based wide gap semiconductor materials for x-ray and gamma ray detection", Proc. SPIE 8018, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII, 80180H (3 June 2011); https://doi.org/10.1117/12.883230

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