Paper
25 May 2011 Terahertz detection by field effect transistors security imaging
W. Knap, F. Teppe, C. Consejo, B. Chenaud, J. Torres, P. Solignac, Z. R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, P. Buzatu, A. El Fatimy, F. Schuster, H. Videlier, M. Sakowicz, B. Giffard, T. Skotnicki, F. Palma
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Abstract
In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Knap, F. Teppe, C. Consejo, B. Chenaud, J. Torres, P. Solignac, Z. R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, P. Buzatu, A. El Fatimy, F. Schuster, H. Videlier, M. Sakowicz, B. Giffard, T. Skotnicki, and F. Palma "Terahertz detection by field effect transistors security imaging", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802307 (25 May 2011); https://doi.org/10.1117/12.883661
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KEYWORDS
Terahertz radiation

Field effect transistors

Sensors

Plasma

Quantum cascade lasers

Transistors

Terahertz detection

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