Silicon and nitride FETs for THz sensing

M. Shur

doi:10.1117/12.883309

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13 May 2011 Silicon and nitride FETs for THz sensing

M. Shur

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Proceedings Volume 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III; 80310J (2011) https://doi.org/10.1117/12.883309
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Traditional THz electronics is using nonlinear properties of Schottky diodes for THz detectors and mixers and Gunn diodes driving frequency multiplier Schottky diode chains. Recently, ultra-short channel silicon CMOS and nitridebased transistors have demonstrated THz performance. New approaches use excitations of electron density in FET channels - called plasma waves - to generate and detect THz radiation, and extremely high sheet electron density in short channel AlN/GaN based HEMTs makes them especially suitable for applications in THz plasmonic devices.

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M. Shur "Silicon and nitride FETs for THz sensing", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80310J (13 May 2011); https://doi.org/10.1117/12.883309

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