Zero-bandgap graphene for infrared sensing applications

King Wai Chiu Lai; Ning Xi; Hongzhi Chen; Carmen Kar Man Fung; Liangliang Chen

doi:10.1117/12.883597

13 May 2011 Zero-bandgap graphene for infrared sensing applications

King Wai Chiu Lai, Ning Xi, Hongzhi Chen, Carmen Kar Man Fung, Liangliang Chen

Proceedings Volume 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III; 80312N (2011) https://doi.org/10.1117/12.883597
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Recently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages.

Citation Download Citation

King Wai Chiu Lai, Ning Xi, Hongzhi Chen, Carmen Kar Man Fung, and Liangliang Chen "Zero-bandgap graphene for infrared sensing applications", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80312N (13 May 2011); https://doi.org/10.1117/12.883597

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