Ultraviolet photodetectors directly integrated on CMOS using low-temperature ZnO-based nanowire techniques

Robert Olah; Achyut K. Dutta; Deli Wang; Tariq Manzur

doi:10.1117/12.888013

Translator Disclaimer

23 May 2011 Ultraviolet photodetectors directly integrated on CMOS using low-temperature ZnO-based nanowire techniques

Robert Olah, Achyut K. Dutta, Deli Wang, Tariq Manzur

Author Affiliations +

Proceedings Volume 8046, Unattended Ground, Sea, and Air Sensor Technologies and Applications XIII; 80460M (2011) https://doi.org/10.1117/12.888013
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Visible and solar blind UV detector arrays with spectrum below visible light or solar blind avoid interference from visible light and solar radiation. A candidate for UV detectors is ZnO with a high bandgap of 3.4 eV. ZnO with combinations of Mg or Cd can be tuned to absorb ultraviolet light from 210 nm to 450 nm. Banpil is developing visible and solar blind photodetectors using ZnO nanowires grown at temperatures below 400C to facilitate direct ZnO growth on silicon ROICs providing maximum photon absorption. Potential candidates to combine with ZnO to increase the bandgap potential are MgO and BeO. Solution methods were developed to grow ZnBeO nanowires and solution methods to overcome the ZnO wurtzite, MgO cubic and miscibility gap to grow ZnMgO nanowires. Modeling, simulation, process steps to grow ZnBeO and ZnMgO using electrophoresis and final measurement results are shown for generating ZnBeO and ZnMgO nanowire solar and visible blind sensors.

Citation Download Citation

Robert Olah, Achyut K. Dutta, Deli Wang, and Tariq Manzur "Ultraviolet photodetectors directly integrated on CMOS using low-temperature ZnO-based nanowire techniques", Proc. SPIE 8046, Unattended Ground, Sea, and Air Sensor Technologies and Applications XIII, 80460M (23 May 2011); https://doi.org/10.1117/12.888013

ACCESS THE FULL ARTICLE