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19 May 2011 Advancing the charging effect correction with time-dependent discharging model
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Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 808109 (2011) https://doi.org/10.1117/12.899905
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan
Abstract
A new method to describe the resist surface charging effect more accurately is proposed. In our previous work, we handled only the static portion of the surface charging and it was applicable only to a limited situation. The scope of this paper is to add a new model to handle the dynamic, discharging behavior on top of the existing static model to make the whole charging model closer to what is really happening on the plate during the exposure. With the new model, the correction accuracy has been improved not only for the equilibrium state but also for the state when the tool is dynamically writing the main pattern. We conclude that our Charging Effect Correction (CEC) was advanced by this new model to become completely production ready.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriaki Nakayamada, Takashi Kamikubo, Hirohito Anze, and Shuichi Tamamushi "Advancing the charging effect correction with time-dependent discharging model", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 808109 (19 May 2011); https://doi.org/10.1117/12.899905
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