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19 May 2011 New yield-aware mask strategies
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Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 80810P (2011) https://doi.org/10.1117/12.899295
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan
Abstract
In this paper, we provide new yield-aware mask strategies to mitigate emerging variability and defectivity challenges. To address variability, we analyze CD variability with respect to reticle size, and its impact on parametric yield. With a cost model that incorporates mask, wafer, and processing cost considering throughput, yield, and manufacturing volume, we assess various reticle strategies (e.g., single layer reticle (SLR), multiple layer reticle (MLR), and small and large size) considering field-size dependent parametric yield. To address defectivity, we compare parametric yield due to EUV mask blank defects for various reticle strategies in conjunction with reticle floorplan optimizations such as shifting of the mask pattern within a mask blank to avoid defects being superposed by performance-critical patterns of a design.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kwangok Jeong, Andrew B. Kahng, and Christopher J. Progler "New yield-aware mask strategies", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810P (19 May 2011); https://doi.org/10.1117/12.899295
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