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6 September 2011 Silanization of plasma-grown silicon quantum dots for production of a tunable, stable, colloidal solution
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Abstract
Nanomaterials have the potential to revolutionize photovoltaics with the promise of new physics, novel architectures and low cost synthesis. Silicon quantum dots, relative to their II-VI counterparts, are understudied due to the difficulty of solution synthesis and chemical passivation. However, silicon is still an attractive solar cell material, providing an optimal band gap, low toxicity, and a very solid body of physical understanding of bulk silicon to draw from. We have synthesized silicon quantum dots with plasma enhanced chemical vapor deposition, and have developed a method for chemical passivation of these silicon quantum dots that can be used on particles created in a variety of ways. This versatile method utilizes oxidation via wet chemical etch and subsequent siloxane bond formation. The attachment of a silane to the SiOx shell leads to stability of the silicon core for over a month in air, and individual particles can be seen with TEM; thus a stable, colloidal suspension is formed. The future for this technique, including increasing quantum yield of the particles by changing the nature of the oxide, will be discussed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ingrid E. Anderson, Rebecca A. Shircliff, Benjamin G. Lee, Brian Simonds, Sumit Agarwal, Paul Stradins, and Reuben T. Collins "Silanization of plasma-grown silicon quantum dots for production of a tunable, stable, colloidal solution", Proc. SPIE 8094, Nanophotonic Materials VIII, 809403 (6 September 2011); https://doi.org/10.1117/12.892836
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