Photoluminescence from silicon nitride alloys

J. Kistner; M. B. Schubert; J. H. Werner

doi:10.1117/12.892676

7 September 2011 Photoluminescence from silicon nitride alloys

J. Kistner, M. B. Schubert, J. H. Werner

Proceedings Volume 8094, Nanophotonic Materials VIII; 80940M (2011) https://doi.org/10.1117/12.892676
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Silicon nitride alloys emit photoluminescence all over the visible range. Recent studies ascribed this luminescence to quantum-size effects within silicon nanocrystals that were either shown or assumed to form inside the silicon nitride matrix; luminescence of the matrix itself was ignored. Observing the same luminescence without the presence of silicon nanocrystals, our work identifies the silicon nitride matrix itself to be responsible for the photoluminescence. In contrast to the silicon nanocrystal approach, the applied band tail luminescence model explains all aspects of the luminescence. We conclude that silicon nitride is an inappropriate matrix for investigating photoluminescence from silicon nanocrystals.

Citation Download Citation

J. Kistner, M. B. Schubert, and J. H. Werner "Photoluminescence from silicon nitride alloys", Proc. SPIE 8094, Nanophotonic Materials VIII, 80940M (7 September 2011); https://doi.org/10.1117/12.892676

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