Paper
12 September 2011 Low power consumption electrically pumped photonic crystal membrane devices
Bryan Ellis, Gary Shambat, Marie Mayer, Jan Petykiewicz, Tomas Sarmiento, James Harris, Eugene Haller, Jelena Vuckovic
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Abstract
A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work. The lateral junction is optimized to efficiently inject current into a photonic crystal nanocavity. We have demonstrated electrically pumped lasing by using the lateral junction to pump a quantum dot photonic crystal nanocavity laser. Continuous wave lasing is observed at temperatures up to 150K, and a threshold of 181nA at 50K is demonstrated - the lowest threshold ever demonstrated in an electrically pumped laser. We have demonstrated electrical pumping of photonic crystal nanobeam light emitting diodes, and observe linewidth narrowing at room temperature.
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Bryan Ellis, Gary Shambat, Marie Mayer, Jan Petykiewicz, Tomas Sarmiento, James Harris, Eugene Haller, and Jelena Vuckovic "Low power consumption electrically pumped photonic crystal membrane devices", Proc. SPIE 8095, Active Photonic Materials IV, 809519 (12 September 2011); https://doi.org/10.1117/12.894479
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KEYWORDS
Photonic crystals

Laser damage threshold

Laser crystals

Quantum dots

Doping

Silicon

Electroluminescence

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