All-printed CNT transistors with high on-off ratio and bias-invariant transconductance

Guiru Gu; Yunfeng Ling; Runyu Liu; Puminun Vasinajindakaw; Xuejun Lu; Carissa S. Jones; Wu-Sheng Shih; Vijaya Kayastha; Nick L. Downing; Urs Berger; Mike Renn

doi:10.1117/12.894472

19 September 2011 All-printed CNT transistors with high on-off ratio and bias-invariant transconductance

Guiru Gu, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih, Vijaya Kayastha, Nick L. Downing, Urs Berger, Mike Renn

Author Affiliations +

Proceedings Volume 8101, Carbon Nanotubes, Graphene, and Associated Devices IV; 81010B (2011) https://doi.org/10.1117/12.894472
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

We report an all-printed flexible carbon nanotube (CNT) thin-film transistor (TFT). All the CNT TFT components, including the source and drain electrodes, the TFT transport channel, and the gate electrode, are printed on a flexible substrate at room temperature. A high ON/OFF ratio of over 10³ was achieved. The all printed CNT-TFT also exhibits bias-invariant transconductance over a certain gate bias range. This all-printed process avoids the conventional procedures in lithography, vacuum, and metallization, and offers a promising technology for low-cost, high-throughput fabrication of large-area flexible electronics on a variety of substrates, including glass, Si, indium tin oxide and plastics.

Citation Download Citation

Guiru Gu, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih, Vijaya Kayastha, Nick L. Downing, Urs Berger, and Mike Renn "All-printed CNT transistors with high on-off ratio and bias-invariant transconductance", Proc. SPIE 8101, Carbon Nanotubes, Graphene, and Associated Devices IV, 81010B (19 September 2011); https://doi.org/10.1117/12.894472

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