X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition

Y. R. Lan; S.-P. Liu; C. C. Wei; Y.-C. Fu; Y. R. Wu; J. M. Chen; R.-H. Horng; D.-S. Wuu; Z. C. Feng

doi:10.1117/12.893087

26 September 2011 X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition

Y. R. Lan, S.-P. Liu, C. C. Wei, Y.-C. Fu, Y. R. Wu, J. M. Chen, R.-H. Horng, D.-S. Wuu, Z. C. Feng

Author Affiliations +

Proceedings Volume 8104, Nanostructured Thin Films IV; 81040X (2011) https://doi.org/10.1117/12.893087
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Al-doped ZnO can replace tin-doped indium oxide (ITO) as a good transparent conductive oxide (TCO) in LEDs and optoelectronic applications. We investigate on nanometer scale AlZnO thin film materials epitaxied on sapphire substrates in 350-650°C from pulsed laser deposition (PLD). Synchrotron radiation X-ray absorption fine-structure spectroscopy on O K-edge indicates that Al-doped ZnO can not form alloy at growth temperature 350°C without Al-O bonding feature. The Al-O transition of AZO550 is stronger than AZO650. These are correlated to Raman scattering measurements and analyses. Al-doped ZnO grown at 350°C possesses weak/broad Raman signals indicating a poor crystalline film. The E2 (high) mode is strong and narrow in AZO550. All these experimental results indicate that PLD grown AlZnO film on sapphire could get a better crystalline quality at 550°C than 350°C and 650°C.

Citation Download Citation

Y. R. Lan, S.-P. Liu, C. C. Wei, Y.-C. Fu, Y. R. Wu, J. M. Chen, R.-H. Horng, D.-S. Wuu, and Z. C. Feng "X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition", Proc. SPIE 8104, Nanostructured Thin Films IV, 81040X (26 September 2011); https://doi.org/10.1117/12.893087

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