Positive Near-UV Resist For Bilayer Lithography

R. Sezi; R. Leuschner; c. Nolscher; D. Stephani

doi:10.1117/12.975609

17 September 1987 Positive Near-UV Resist For Bilayer Lithography

R. Sezi, R. Leuschner, c. Nolscher, D. Stephani

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975609
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

A novel alkaline-soluble silicon-containing copolymer for use in bilayer lithography has been developed. This copolymer (CVPVS)consists of p-vinylphenol and vinyltrimethylsilane and was prepared in a two-step process: anionic polymerization of a p-alkoxystyrene with vinyltrimethylsilane followed by ether cleavage of the alkoxy group. The copo-lymer used for lithographic application has a number average molecular weight of 2700 and shows very good solubility in a variety of organic solvents. CVPVS has nearly no absorption above 300 nm and at 248 nm its absorption is six times lower than that of a commercially available poly(p-vinylphenol). The silicon-containing photoresist (SPR) prepared from this copolymer and a diazoquinone photosensitizer is completely compatible with current resist processing.

Citation Download Citation

R. Sezi, R. Leuschner, c. Nolscher, and D. Stephani "Positive Near-UV Resist For Bilayer Lithography", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975609

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