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13 September 2011 Minority carrier transport length in electrodeposited Cu2O for heterojunction solar cells
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Abstract
The minority carrier transport length (L) is a critical parameter limiting the performance of inexpensive Cu2O-ZnO photovoltaic devices. In this work, this length is determined for electrochemically deposited Cu2O by linking the optical carrier generation profile from front and back incident-photon-to-electron conversion efficiency (IPCE) measurements to a one dimensional carrier transport model. A transport length of ~ 400 nm is estimated. This critical length explains the losses typically presented by these devices. The consequences of this L on device design with the aim of improving solar cell performance are described.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yingchi Liu, Hubert K. Turley, John R. Tumbleston, and Rene Lopez "Minority carrier transport length in electrodeposited Cu2O for heterojunction solar cells", Proc. SPIE 8110, Thin Film Solar Technology III, 81100P (13 September 2011); https://doi.org/10.1117/12.892123
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