Physical properties of Al-doped MgZnO film grown by RF magnetron sputtering using ZnO/MgO/Al2O3 target

Kuang-Po Hsueh; Yi-Chang Cheng; Wen-Yen Lin; Hsien-Chin Chiu; Yu-Ping Huang; Gou-Chung Chi; Wei-Sheng Liu

doi:10.1117/12.891269

13 September 2011 Physical properties of Al-doped MgZnO film grown by RF magnetron sputtering using ZnO/MgO/Al₂O₃ target

Kuang-Po Hsueh, Yi-Chang Cheng, Wen-Yen Lin, Hsien-Chin Chiu, Yu-Ping Huang, Gou-Chung Chi, Wei-Sheng Liu

Author Affiliations +

Proceedings Volume 8110, Thin Film Solar Technology III; 81100X (2011) https://doi.org/10.1117/12.891269
Event: SPIE Solar Energy + Technology, 2011, San Diego, California, United States

Abstract

This study investigates the physical properties of Al-doped Mg_xZn_1-xO (AMZO) films. Al-doped Mg_xZn_1-xO films were deposited by radio-frequency (RF) magnetron sputtering system using a 4 inch ZnO/MgO/Al₂O₃ (76/19/5 wt%) target. This study determined the resulting x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Hall measurement, and transparent performance of the films. XRD results indicate that the diffraction angles of the annealed AMZO film shifted toward the high-angle side, indicating that thermal annealing could relax the compressive strain components in the as-deposited samples. XPS results reveal a high carbon content on the surface of Mg_xZn_1-xO. This may be due to contamination. The average Mg content of the as-grown AMZO is about 19.23 at. % at a depth of 40 nm. The Al-doped Mg_xZn_1-xO film in this study shows high transparency with transmittances over 95 % in the visible region (400 ~ 800nm), and a sharp absorption edge is visible in the UV region due to the Mg content. The Hall measurement of Al-doped Mg_xZn_1-xO films deposited at lower RF power show higher doping concentrations, lower resistivity and higher mobility as a function of the annealing temperature. Experimental results indicate that Al-doped Mg_xZn_1-xO film with 1000 °C annealing contains more oxygen vacancies, which play the role of donor. Oxygen vacancies generate states in the band gap and increase conductivity.

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Kuang-Po Hsueh, Yi-Chang Cheng, Wen-Yen Lin, Hsien-Chin Chiu, Yu-Ping Huang, Gou-Chung Chi, and Wei-Sheng Liu "Physical properties of Al-doped MgZnO film grown by RF magnetron sputtering using ZnO/MgO/Al₂O₃ target", Proc. SPIE 8110, Thin Film Solar Technology III, 81100X (13 September 2011); https://doi.org/10.1117/12.891269

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