Properties and spectroscopic performance of semiconductor detectors under high-flux irradiation

M. L. Rodrigues; Z. He

doi:10.1117/12.897500

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22 September 2011 Properties and spectroscopic performance of semiconductor detectors under high-flux irradiation

M. L. Rodrigues, Z. He

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Proceedings Volume 8143, Medical Applications of Radiation Detectors; 81430A (2011) https://doi.org/10.1117/12.897500
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

In recent years, operation of wide band-gap semiconductor detectors under high-flux irradiation in medical and security applications has called the attention of the scientific commnity. However, under high-flux irradiation, these detectors are limited by poor hole transport properties and other factors. In our studies, the build up of space charge as a function of time has been systematically investigated through direct comparison between experiments and charge transport simulations. In order to benchmark and calibrate our simulations, charge transport properties of CdZnTe detectors used in high-flux experiments were measured. Our results show that the polarization effect, caused by the build up of positive space charge as a function of time, initially distorts and eventually causes complete breakdown of the operating electric field.

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M. L. Rodrigues and Z. He "Properties and spectroscopic performance of semiconductor detectors under high-flux irradiation", Proc. SPIE 8143, Medical Applications of Radiation Detectors, 81430A (22 September 2011); https://doi.org/10.1117/12.897500

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