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16 September 2011 Near-infrared semiconductor-nanostructured light detectors
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Abstract
Novel nanostructured III-V semiconductor devices are investigated for light detection in the near infrared spectral region. Single-electron memories based on site-controlled InAs quantum dots embedded in a GaAs/AlGaAs quantum-wire transistor were fabricated and studied. By using a nanohole structure template on a modulation-doped GaAs/AlGaAs heterostructure, two single InAs quantum dots were centrally positioned in a quantum-wire transistor so that pronounced shifts of the transistor threshold occur by charging of the QDs with single electrons. Single-electron read and write functionalities up to room temperature were observed and the memory function can be also controlled by light with a wavelength in the telecommunication range. Furthermore, AlGaAs/GaAs/AlGaAs double barrier resonant tunneling diodes (RTD) with an embedded GaInNAs absorption layer have been fabricated for telecom wavelength light detection at room temperature. The absorption layer was lattice matched grown within the GaAs system of the RTD. We demonstrate that the devices exhibit typical RTDs characteristic and they are light sensitive at the telecom wavelength 1.3 μm in the order of just a few nW. Routes to further reduce the detection limit are discussed whereas the envisaged devices have prospects to deliver sensitivities approaching the quantum limit.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Höfling, S. Göpfert, F. Hartmann, C. Schneider, D. Bisping, D. Press, M. Kamp, L. Worschech, and A. Forchel "Near-infrared semiconductor-nanostructured light detectors", Proc. SPIE 8154, Infrared Remote Sensing and Instrumentation XIX, 81540G (16 September 2011); https://doi.org/10.1117/12.896424
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