Investigating the passivation of mercury cadmium telluride by atomic layer deposition of aluminum oxide

James Pattison; Priyalal Wijewarnasuriya

doi:10.1117/12.893760

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16 September 2011 Investigating the passivation of mercury cadmium telluride by atomic layer deposition of aluminum oxide

James Pattison, Priyalal Wijewarnasuriya

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Proceedings Volume 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II; 815504 (2011) https://doi.org/10.1117/12.893760
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

High aspect ratio features in mercury cadmium telluride (MCT) for advanced IR sensor technologies present a challenge to deposition of electrical passivation materials. Deposition of aluminum oxide (Al2O3) onto MCT near room temperature by plasma assisted atomic layer deposition was studied. Conformal deposition was studied through SEM images of thick (ca. 150 nm) deposition onto high aspect ratio features dry etched into MCT. Minority carrier lifetime was measured by photoconductive decay transients of MCT before and after deposition, and the lifetimes compared.

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James Pattison and Priyalal Wijewarnasuriya "Investigating the passivation of mercury cadmium telluride by atomic layer deposition of aluminum oxide", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 815504 (16 September 2011); https://doi.org/10.1117/12.893760

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