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16 September 2011 Calculated performance of an Auger-suppressed unipolar HgCdTe photodetector for high temperature operation
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The performance of leading HgCdTe p-n junction infrared (IR) device technology is limited by thermal generationrecombination (G-R) mechanisms and material processing challenges associated with achieving low, controllable in-situ p-type doping using molecular beam epitaxy (MBE) growth techniques. These aspects are addressed in the proposed hybrid HgCdTe NBνN structure which relies on band gap engineered layers to suppress Shockley-Read-Hall (SRH) and Auger G-R processes contributing to performance degradation. The unipolar NBνN architecture provides the desired advantages of a simplified fabrication process, eliminating p-type doping requirements. Physics-based numerical device simulations incorporating established HgCdTe material parameters and G-R mechanisms are used to study the performance characteristics of a long wavelength infrared (LWIR) NBνN device with a 12 μm cut-off wavelength. The calculated results are compared to those values obtained for an LWIR HgCdTe nBn device. Theoretical dark current density (Jdark) values of the NBνN device are lower by an order of magnitude or more for temperatures between 50 K and 245 K. Calculated detectivity (D*) values of 2.367 x 1014 - 2.273 x 1011 cm Hz0.5/W for temperatures ranging from 50 K and 95 K, respectively, are observed in the NBνN structure.
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Anne M. Itsuno, Jamie D. Phillips, Angelo S Gilmore, and Silviu Velicu "Calculated performance of an Auger-suppressed unipolar HgCdTe photodetector for high temperature operation", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81550J (16 September 2011);


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