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16 September 2011Calculated performance of an Auger-suppressed unipolar HgCdTe
photodetector for high temperature operation
The performance of leading HgCdTe p-n junction infrared (IR) device technology is limited by thermal generationrecombination
(G-R) mechanisms and material processing challenges associated with achieving low, controllable in-situ
p-type doping using molecular beam epitaxy (MBE) growth techniques. These aspects are addressed in the proposed
hybrid HgCdTe NBνN structure which relies on band gap engineered layers to suppress Shockley-Read-Hall (SRH) and
Auger G-R processes contributing to performance degradation. The unipolar NBνN architecture provides the desired
advantages of a simplified fabrication process, eliminating p-type doping requirements. Physics-based numerical device
simulations incorporating established HgCdTe material parameters and G-R mechanisms are used to study the
performance characteristics of a long wavelength infrared (LWIR) NBνN device with a 12 μm cut-off wavelength. The
calculated results are compared to those values obtained for an LWIR HgCdTe nBn device. Theoretical dark current
density (Jdark) values of the NBνN device are lower by an order of magnitude or more for temperatures between 50 K and
245 K. Calculated detectivity (D*) values of 2.367 x 1014 - 2.273 x 1011 cm Hz0.5/W for temperatures ranging from 50 K
and 95 K, respectively, are observed in the NBνN structure.
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Anne M. Itsuno, Jamie D. Phillips, Angelo S Gilmore, Silviu Velicu, "Calculated performance of an Auger-suppressed unipolar HgCdTe photodetector for high temperature operation," Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81550J (16 September 2011); https://doi.org/10.1117/12.893732