Paper
16 September 2011 AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection
F. Shahedipour-Sandvik, N. Tripathi, L. D. Bell
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Abstract
A III-nitride based tunable hyperspectral detector pixel is described with the potential for real time detection in a wide range of wavelengths including near infrared (NIR). This detector has intrinsic hyperspectral pixels, each pixel being tunable in real time through a range of wavelengths determined by pixel design. This will eliminate the need for external gratings and filters, substantially decreasing weight, size, and complexity and increasing robustness. The single pixel detector discussed here offers the potential of wavelength spectroscopy from UV to NIR. To allow for dynamic tunability a multilayered AlxGa1-xN (0<x<1) forms the triangular potential barrier. Inclusion of InxGa1-xN as the absorbing layer offers detection in the IR region. The results of our experiments are complimented and explained using extensive device simulation.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Shahedipour-Sandvik, N. Tripathi, and L. D. Bell "AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81550P (16 September 2011); https://doi.org/10.1117/12.897394
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KEYWORDS
Sensors

Gallium nitride

Electrons

Indium gallium nitride

Near infrared

Infrared sensors

Metals

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