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16 September 2011 MBE growth of ZnTe and HgCdSe on Si: a new IR material
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Growth of ZnTe and HgCdSe on Si has been pursued using molecular beam epitaxy (MBE) as a new class of IR materials. Besides, ZnTe/Si can also be used as a lattice-matching, large area and low cost alternate substrate for other III-V and II-VI compound semiconductors, such as GaSb based type-II superlattice materials around 6.1A. We report in this paper our systematic studies on MBE growth conditions for ZnTe(211) on Si and highlights of MBE growth of HgCdSe on ZnTe/Si. A close to optimal growth window has been established for MBE growth of ZnTe(211)/Si(211) to achieve high crystalline quality, low defect and dislocation densities as well as excellent surface morphology. Using this baseline MBE growth process, we are able to obtain ZnTe(211)/Si wafers with X-ray full-width at half-maximum (FWHM) as low as 70 arcsec, low dislocation density (~105 cm-2) and defect density (1000 cm-2).
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Yuanping Chen, Gregory Brill, David Benson, Priyalal Wijewarnasuriya, and Nibir Dhar "MBE growth of ZnTe and HgCdSe on Si: a new IR material", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 815511 (16 September 2011);

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