Material characteristics of HgCdSe grown on GaSb and ZnTe/Si substrates by MBE

G. Brill; Y. Chen; P. Wijewarnasuriya

doi:10.1117/12.894894

16 September 2011 Material characteristics of HgCdSe grown on GaSb and ZnTe/Si substrates by MBE

G. Brill, Y. Chen, P. Wijewarnasuriya

Proceedings Volume 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II; 815512 (2011) https://doi.org/10.1117/12.894894
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

Much progress has been made in developing high quality HgCdTe/Si for large area focal plane array (FPA) applications. However, even with all the material advances made to date, there is no guarantee that this technology will be mature enough to meet the stringent FPA specifications required for long wavelength infrared (LWIR) systems. With this in mind, the Army Research Laboratory (ARL) has begun investigating HgCdSe material for infrared (IR) applications. Analogous to HgCdTe, HgCdSe is a tunable semiconductor that can detect any wavelength of IR radiation through control of the alloy composition. In addition, several mature, large area bulk III-V substrates are nearly latticematched to HgCdSe giving this system a possible advantage over HgCdTe in which no scalable, bulk substrate technology exists. We have initiated a study of the growth of HgCdSe using molecular beam epitaxy (MBE). Growth temperature and material flux ratios were varied to ascertain the best growth conditions and study defect formation. Smooth surface morphology has been achieved using a growth temperature much lower than HgCdTe. Preliminary data suggest a linear relationship between the Se/Cd flux ratio used during growth and the cut-off wavelength as measured by FTIR.

Citation Download Citation

G. Brill, Y. Chen, and P. Wijewarnasuriya "Material characteristics of HgCdSe grown on GaSb and ZnTe/Si substrates by MBE", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 815512 (16 September 2011); https://doi.org/10.1117/12.894894

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