Ge on Si and InP/InGaAs single photon avalanche diodes

Zhiwen Lu; Wenlu Sun; Chong Hu; Archie Holmes; Joe C. Campbell; Yimin Kang; Han-Din Liu

doi:10.1117/12.894533

16 September 2011 Ge on Si and InP/InGaAs single photon avalanche diodes

Zhiwen Lu, Wenlu Sun, Chong Hu, Archie Holmes, Joe C. Campbell, Yimin Kang, Han-Din Liu

Proceedings Volume 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II; 81551E (2011) https://doi.org/10.1117/12.894533
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

This paper describes single photon detection for Ge on Si separate-absorption-charge-multiplication (SACM) avalanche photodiodes and advances in quenching for InP/InGaAs single photon avalanche diodes.

Citation Download Citation

Zhiwen Lu, Wenlu Sun, Chong Hu, Archie Holmes, Joe C. Campbell, Yimin Kang, and Han-Din Liu "Ge on Si and InP/InGaAs single photon avalanche diodes", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81551E (16 September 2011); https://doi.org/10.1117/12.894533

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