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13 October 2011 Development status and infrastructure progress update of aerial imaging measurements on EUV masks
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Abstract
The high volume device manufacturing infrastructure for the 22nm node and below based on EUVL technology requires defect-free EUV mask manufacturing as one of its foundations. The EUV Mask Infrastructure program (EMI) initiated by SEMATECH has identified an actinic measurement system for the printability analysis of EUV mask defects to ensure defect free mask manufacturing and cost-effective high-volume EUV production as an infrastructural prerequisite for the EUVL roadmap ([1], [2]). The Concept and Feasibility study for the AIMSTM EUV resulted in a feasible tool concept for 16nm defect printability review. The main development program for the AIMSTM EUV has been started at Carl Zeiss leading to a commercialized tool available in 2014. In this paper we will present the status of the progress of the design phase of this development and an infrastructure progress update of the EUV Mask defect printability review.
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Sascha Perlitz, Wolfgang Harnisch, Ulrich Strößner, Jan Hendrik Peters, Markus Weiss, and Dirk Hellweg "Development status and infrastructure progress update of aerial imaging measurements on EUV masks", Proc. SPIE 8166, Photomask Technology 2011, 816610 (13 October 2011); https://doi.org/10.1117/12.899038
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