A study on irregular growing defect mechanism and removal process

Hyemi Lee; JeaYoung Jun; GooMin Jeong; SangChul Kim; SangPyo Kim; ChangReol Kim

doi:10.1117/12.898975

13 October 2011 A study on irregular growing defect mechanism and removal process

Hyemi Lee, JeaYoung Jun, GooMin Jeong, SangChul Kim, SangPyo Kim, ChangReol Kim

Proceedings Volume 8166, Photomask Technology 2011; 816613 (2011) https://doi.org/10.1117/12.898975
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

Main Topics of a photomask have been CD(Critical Dimension), Overlay and Defects. In side of defects, technique suppressing growing defects which are occurring on a mask surface becomes as important as defect control method during mask manufacturing process. Conventional growing defects arise out of combination of sulfuric ion on a mask surface and environmental facts such as pellicle ingredient, humidity and etc. So Mask cleaning process was driven to reduce sulfuric acid on a mask surface which source of growing defects. And actually various cleaning process has been developed through the elimination of sulfuric acid such as DI, O3 cleaning. Normally Conventional growing defects are removed using DI, SC1 or SPM cleaning according to incidence. But recently irregular growing defects are occurred which are completely distinct from conventional growing defects. Interestingly, irregular growing defects are distributed differently from conventional on a mask. They spread in isolated space patterns and reduce the transmittance so that space pattern size continuously decreased. It causes Wafer Yield loss. Furthermore, irregular growing defects are not fully removed by cleaning which is traditional removal process. In this study, we provide difference between conventional and irregular growing defects based on its characteristic and distributed formation. In addition, we present and discuss removal and control technique about irregular growing defects. For elemental analysis and study, diverse analysis tool was applied such as TEM for checking Cross-Section, AFM for checking the roughness of surface, EDAX, AES, IC for analyzing remained ions and particles on the mask and AIMS.

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Hyemi Lee, JeaYoung Jun, GooMin Jeong, SangChul Kim, SangPyo Kim, and ChangReol Kim "A study on irregular growing defect mechanism and removal process", Proc. SPIE 8166, Photomask Technology 2011, 816613 (13 October 2011); https://doi.org/10.1117/12.898975

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KEYWORDS

Air contamination

Ions

Chromium

Photomasks

Oxygen

Transmittance

Semiconducting wafers

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