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13 October 2011 Challenges associated with advanced mask cleaning
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Historically, photomask and wafer cleaning have been considered trivial tasks. The primary challenge had been simply the removal of particles that may have an impact on final product yield. As wavelengths decrease and energy on the image plane of the reticle increase, the degree and complexity of surface contaminants on the reticle become a more complicated challenge. The result is that the mask fabricator is faced with two new challenges; reducing and identifying the types of contaminants on the reticle prior to exposure in the wafer fab and eliminating contaminants that have been deposited in the fab. These contaminants are often different in that 193nm exposure produces higher molecular weight contaminants that can be more difficult to remove. While the effects of these contaminants may not be serious for transmissive lithography, their effects can be catastrophic for reflective lithography, such as Extreme Ultra- Violet (EUV) lithography. We will provide results showing the types of contaminants commonly found on various types of reticles and the respective challenges associated with their removal. Additionally, prior to developing an effective cleaning protocol understanding the chemical composition of the substrate is extremely important. We will provide analytical data that will clearly describe the composition of the mask substrates.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian J. Grenon "Challenges associated with advanced mask cleaning", Proc. SPIE 8166, Photomask Technology 2011, 81661K (13 October 2011);

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