Paper
22 September 2011 THz/sub-THz detector based on electrons and holes heating by electromagnetic wave propagating along Hg1-xCdxTe layer
F. Sizov, V. Zabudsky, V. Dobrovolsky, N. Momot, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk, S. Bunchuk, N. Mikhailov, V. Varavin
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Abstract
Direct detection thin-film bipolar narrow-gap Hg1-xCdxTe semiconductor is considered as a waveguide THz/sub-THz bolometer. The response of such thin layer detectors was calculated and measured in ν=0.037-1.54 THz frequency range at T~70-300 K. Noise equivalent power of such detectors can reach NEP300K~4×10-10 W/Hz1/2 and NEP100K~10-11 in sub-THz frequency range.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Sizov, V. Zabudsky, V. Dobrovolsky, N. Momot, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk, S. Bunchuk, N. Mikhailov, and V. Varavin "THz/sub-THz detector based on electrons and holes heating by electromagnetic wave propagating along Hg1-xCdxTe layer", Proc. SPIE 8167, Optical Design and Engineering IV, 816728 (22 September 2011); https://doi.org/10.1117/12.896580
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KEYWORDS
Sensors

Electrons

Bolometers

Antennas

Terahertz radiation

Semiconductors

Electromagnetic radiation

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