Paper
8 September 2011 Properties comparison of plasma-deposited SiOx and SiNx films applied to supporting films in an infrared scene projector device
Shun Zhou, Weiguo Liu, Changlong Cai, Huan Liu, Wengang Qin, Feng Guo
Author Affiliations +
Abstract
Microemitter resistor arrays are one popular approach to obtaining an infrared scene projector capable of wide dynamic range. Typically, the array operates in a two-level architecture wherein the array resides suspended on support legs. In the microbridge pixel structure, the support legs films must have low thermal conductivity, high mechanical strength, minimal stress and good thermal stability. Usually, silicon nitride (SiNx) films can meet the requirement and have been used as support films in dynamic infrared scene generation. While compared with the silicon nitride films, the silicon oxide (SiOx) films have a lower thermal conductivity. If the SiOx films can also be used as support films in the device instead of SiNx films, it can reduce the thermal loss further. Namely, the SiOx films can make the pixel to achieve higher temperature and higher radiance with lower power than silicon nitride films do. In this work, SiOx and SiNx films were deposited in a PECVD reactor .The stress, Young modulus, Hardness, thermal stability, and infrared optical absorption properties of the two types of films were investigated and compared.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shun Zhou, Weiguo Liu, Changlong Cai, Huan Liu, Wengang Qin, and Feng Guo "Properties comparison of plasma-deposited SiOx and SiNx films applied to supporting films in an infrared scene projector device", Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 81910U (8 September 2011); https://doi.org/10.1117/12.900115
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KEYWORDS
Absorption

Infrared radiation

Silicon films

Silicon

Thermography

Projection systems

Dielectrics

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