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8 September 2011 Performance analysis of quantum dots infrared photodetector
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Abstract
Performance analysis of the quantum dots infrared photodetector(QDIP), which can provide device designers with theoretical guidance and experimental verification, arouses a wide interest and becomes a hot research topic in the recent years. In the paper, in comparison with quantum well infrared photodetector(QWIP) characteristic, the performance of QDIP is mainly discussed and summarized by analyzing the special properties of quantum dots material. To be specific, the dark current density and the detectivity in the normalized incident phenomenon are obtained from Phillip performance model, the carrier lifetime and the dark current of QDIP are studied by combing with the "photon bottleneck" effect, and the detectivity of QDIP is theoretically derived from considering photoconduction gain under the influence of the capture probability. From the experimental results, a conclusion is made that QDIP can not only receive the normal incidence light, but also has the advantages of the long carrier life, the big photoconductive gain, the low dark current and so on, and it further illustrates a anticipated superiority of QDIP in performance and a wide use of QDIP in many engineering fields in the future.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongmei Liu, Fangfang Zhang, Jianqi Zhang, and Guojing He "Performance analysis of quantum dots infrared photodetector", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930J (8 September 2011); https://doi.org/10.1117/12.898602
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