Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE

Chuan Shen; Renjie Gu

doi:10.1117/12.900514

8 September 2011 Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE

Chuan Shen, Renjie Gu

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81932P (2011) https://doi.org/10.1117/12.900514
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

In this paper, the effects of thermal annealing (TA) were studied by theoretical calculation and experiment. The calculation was based on the Masafumi's model of dislocation movement, modified with thermal stress and lattice-mismatch in the HgCdTe/CdTe/Si(211) heterostructure. As the calculation indicated, the temperature and holding time of TA had great effect on the dislocation reduction, while less improvement with the epilayer thickness and growth orientation. Upon the result of calculation, the TA and thermal cycle annealing (TCA) experiments were performed under different conditions, which fit the calculation properly. The dislocation reduction of TA was investigated by double crystal X-ray rocking curve (DCRC) and etch pit density (EPD) measurements. The EPD of 10μm SW~LW HgCdTe/Si under optimized thermal process could be decreased half order of magnitude, with the lowest EPD at 2×10⁶ cm^-2, as well as the full width at half maximum (FWHM) of the DCRC to 57.8 arcsec.

Citation Download Citation

Chuan Shen and Renjie Gu "Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932P (8 September 2011); https://doi.org/10.1117/12.900514

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