Photoelectron characteristics of HgInTe detector

L. Zhang; X. L. Zhang; W. G. Sun; Z. X. Lu

doi:10.1117/12.900600

8 September 2011 Photoelectron characteristics of HgInTe detector

L. Zhang, X. L. Zhang, W. G. Sun, Z. X. Lu

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81932X (2011) https://doi.org/10.1117/12.900600
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

We present the high performance of Hg₃In₂Te6 metal-semiconductor photodetectors using Indium tin oxide (ITO) as the schottky electrodes by vacuum magnetron sputtering.There is a interfacial oxide layer formation by oxygen plasma process between Indium tin oxide (ITO) and Hg₃In₂Te₆ semiconductor compound to change schottky barrier. The effects of oxygen plasma treatment on Hg₃In₂Te₆ surface property were studied. Under optimized condition, the surface of Hg₃In₂Te₆ is oxidated resulting in decreasing reverse dark current and increasing breakdown voltage, while the barrier height increases from 0.5 to 0.58eV. This method is simple to fabricate high performance HgInTe devices.

Citation Download Citation

L. Zhang, X. L. Zhang, W. G. Sun, and Z. X. Lu "Photoelectron characteristics of HgInTe detector", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932X (8 September 2011); https://doi.org/10.1117/12.900600

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