Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance

Jinhua Li; Ningyi Yuan; Meiping Jiang; Li Kun

doi:10.1117/12.900717

8 September 2011 Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance

Jinhua Li, Ningyi Yuan, Meiping Jiang, Li Kun

Author Affiliations +

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 819338 (2011) https://doi.org/10.1117/12.900717
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO₂ was about -4%/K at room temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO₂ films had a single [002] orientation of VO₂(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping, the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.

Citation Download Citation

Jinhua Li, Ningyi Yuan, Meiping Jiang, and Li Kun "Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819338 (8 September 2011); https://doi.org/10.1117/12.900717

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