Readout on the resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector

Fang-min Guo; Yong-pan Wang; Feng Mao; Zheng-qi Zheng; Jun-hao Chu

doi:10.1117/12.900689

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18 August 2011 Readout on the resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector

Fang-min Guo, Yong-pan Wang, Feng Mao, Zheng-qi Zheng, Jun-hao Chu

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Proceedings Volume 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications; 81942G (2011) https://doi.org/10.1117/12.900689
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Focused on high sensitivity property of the resonant-cavity-enhanced InGaAs/GaAs quantum dots photodetector, the wide dynamic range readout was demanded and designed. The Capacitive Trans-Impedance Amplifier (CTIA) readout structure having bias stability and good linearity compared the characteristic of the Self-Integrated (SI) readout structures is more suitable for the quantum dots photodetector. However, the CTIA structure needs to expand readout dynamic range for effective photoelectric conversion signal output of the novel photodetector. Through the different integration capacitor readout experimental comparison and analysis, a readout structure whose low noise amplification gain could be automatically adjusted was designed, the output dynamic range extended to over 90dB, and the signal to noise and sensitivity of the output signal have been significantly improved.

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Fang-min Guo, Yong-pan Wang, Feng Mao, Zheng-qi Zheng, and Jun-hao Chu "Readout on the resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector", Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81942G (18 August 2011); https://doi.org/10.1117/12.900689

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