Paper
11 August 2011 Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials
F. H. Su, G. Sharma, F. Blanchard, L. Razzari, A. Ayesheshim, R. Morandotti, T. Ozaki, F. A. Hegmann
Author Affiliations +
Abstract
The transient absorption bleaching and velocity overshoot of photoexcited carriers in GaAs and Si have been observed by the intense few-circle terahertz (THz) probe pulse in the optical pump-terahertz probe (OPTP) configuration. The free-carrier THz nonlinearity is attributed to the transient electron redistribution in conduction band induced by the strong THz electric field component.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. H. Su, G. Sharma, F. Blanchard, L. Razzari, A. Ayesheshim, R. Morandotti, T. Ozaki, and F. A. Hegmann "Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials", Proc. SPIE 8195, International Symposium on Photoelectronic Detection and Imaging 2011: Terahertz Wave Technologies and Applications, 81950T (11 August 2011); https://doi.org/10.1117/12.900526
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Terahertz radiation

Gallium arsenide

Silicon

Transient nonlinear optics

Absorption

Scattering

Phonons

Back to Top