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11 August 2011 Far infrared / Terahertz micromechanical imaging-array sensors based on nano-scale optical measurement technology
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Abstract
This paper describes a new concept related to the MEMS(Micro Electro Mechanical system) imaging-array sensors with the structure of micro-cantilever-arrays for detecting far IR and THz radiation. The measure principle is based on an improved optical lever and the core component is a set of micro-displacement measuring device with nano-degree displacement measurement. The amplification coefficient of this improved optical cantilever can reach 102~103 times, combined with a high resolving power to 10-10m. Compared with focal plane arrays sensors, these tape sensors have the ability to measure deformations of micro-cantilever-arrays caused by far IR or THz radiation directly, which can increase the radiation detector sensitivity. The validity of this method is proved by practical experiments. Imaging-array sensors, based on this measure principle, can be made into a new-type MEMS Far IR or THz sensors.
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Xiao-min Liu, Bei Wang, Xu Lu, Er-jun Liang, and Guo-guang Yang "Far infrared / Terahertz micromechanical imaging-array sensors based on nano-scale optical measurement technology", Proc. SPIE 8195, International Symposium on Photoelectronic Detection and Imaging 2011: Terahertz Wave Technologies and Applications, 819518 (11 August 2011); https://doi.org/10.1117/12.900788
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