Paper
15 August 2011 Total-dose hardened of a bipolar NPN differential pair
Ya-Hong Zhai, Ping Li, Wei Li, Guo-Jun Zhang, Yu-Xiang Luo, Bin Hu, Xue Fan
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Abstract
A radiation-hardened Bipolar NPN differential pair is developed and fabricated in the 4μm 20V process. The total ionizing dose response of the unhardened NPN and hardened NPN are compared. The experimental results indicate that after the radiation total dose of 100krad (Si) the current gain of the unhardened NPN is reduced by about 60%~65%. Under the same radiation condition, the current gain of the hardened NPN is greater 15%~20% than the unhardened NPN. Subsequently, the input offset voltage and current of unhardened and hardened differential pairs are measured before and after the radiation total dose of 100krad (Si).The results show that the standard deviations of hardened differential pairs are much smaller. Theory analysis and experiment shows that the radiation hardness approaches are reasonable and efficient.
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Ya-Hong Zhai, Ping Li, Wei Li, Guo-Jun Zhang, Yu-Xiang Luo, Bin Hu, and Xue Fan "Total-dose hardened of a bipolar NPN differential pair", Proc. SPIE 8196, International Symposium on Photoelectronic Detection and Imaging 2011: Space Exploration Technologies and Applications, 81961B (15 August 2011); https://doi.org/10.1117/12.900652
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KEYWORDS
Transistors

Oxides

Amplifiers

Boron

Ionizing radiation

Radiation effects

Dielectrics

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